Open Access1180 nm VECSEL with output power beyond 20 W
Author(s) -
Ranta S.,
Tavast M.,
Lein T.,
Van Lieu N.,
Fetzer G.,
Guina M.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2012.3450
Subject(s) - laser linewidth , materials science , optoelectronics , lasing threshold , laser , optics , molecular beam epitaxy , active laser medium , wavelength , birefringence , laser power scaling , epitaxy , physics , layer (electronics) , composite material
The highest power result for an optically‐pumped single‐chip vertical external‐cavity surface‐emitting laser with emission near 1180 nm is reported. The gain mirror was grown by molecular beam epitaxy and incorporated a strain compensated GaInAs/GaAs/GaAsP active region. An intra‐cavity diamond heat spreader was attached to the gain mirror for thermal management. In free‐running operation, the laser emitted more than 20 W at a mount temperature of about 12 °C. The output spectrum was centred between 1165–1190 nm depending on the mount temperature and pump power. By using an intra‐cavity birefringent filter, the full width at half‐maximum linewidth could be narrowed to ≤1 nm and at the same time achieved approximately 14 W of output power near 1178 nm. Moreover, the lasing wavelength could be tuned over more than 40 nm.