Open AccessArsenic diffusion in boron‐doped germanium
Author(s) -
Liu T.,
Orlowski M. K.
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2012.3444
Subject(s) - germanium , dopant , boron , doping , arsenic , materials science , annealing (glass) , diffusion , analytical chemistry (journal) , vacancy defect , substrate (aquarium) , activation energy , silicon , crystallography , chemistry , optoelectronics , metallurgy , thermodynamics , physics , oceanography , organic chemistry , chromatography , geology
Arsenic (As) diffusion in germanium (Ge) has been studied by implanting As in a Ge substrate with high boron (B) background doping. The high hole density induced by the B doping suppresses negatively charged vacancies (V) in Ge. Under this condition, we have investigated the dependence of As diffusion on the dopant‐vacancy pairs As + V 0 by secondary ion mass spectroscopy. After rapid thermal annealing at 600−750°C, the chemical profiles of As do not change in the highly B doped Ge. Experimental results suggest that the As + V 0 pairs are not the diffusion vehicles of As in Ge. Activation energy of the As + V 0 pairs has to be larger than 3.25 eV.