Open AccessCompact X‐band CMOS bidirectional gain amplifier without T/R switches
Author(s) -
Cho MoonKyu,
Baek Donghyun,
Kim JeongGeun
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2012.2475
Subject(s) - cmos , amplifier , optoelectronics , electrical engineering , high gain antenna , physics , direct coupled amplifier , materials science , electronic engineering , operational amplifier , engineering
Presented is a compact X‐band bidirectional gain amplifier in 0.18 μ m CMOS, which eliminates two T/R switches in the conventional one. The gain of >14 dB and the in/output return losses of >8 dB are achieved at 8–14 GHz. The measured output P1dB is ~1 dBm at 10 GHz. The chip size is 0.62 × 0.60 mm 2 , which is compact due to the removal of two T/R switches for the bidirectional operation. The DC power consumption is 54 mW at 1.8 V supply voltage. Nearly identical performance is achieved in the forward and reverse operations at X‐band. To the authors’ knowledge, this is the first demonstration of an X‐band CMOS bidirectional gain amplifier with the smallest size.