Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE | Zendy

N. Hossain | Zendy; Stephen J. Sweeney | Zendy; Stephan Rogowsky | Zendy; R. Ostendorf | Zendy; J. Wagner | Zendy; S. Liebich | Zendy; M. Zimprich | Zendy; Kerstin Volz | Zendy; Bernardette Kunert | Zendy; W. Stolz | Zendy

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Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE

Author(s) -

N. Hossain,

Stephen J. Sweeney,

Stephan Rogowsky,

R. Ostendorf,

J. Wagner,

S. Liebich,

M. Zimprich,

Kerstin Volz,

Bernardette Kunert,

W. Stolz

Publication year - 2011

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2011.1927

Subject(s) - optoelectronics , metalorganic vapour phase epitaxy , materials science , laser , lasing threshold , diode , quantum well , epitaxy , substrate (aquarium) , semiconductor laser theory , wavelength , optics , layer (electronics) , nanotechnology , physics , oceanography , geology

Recent significant improvements in Ga(NAsP)/GaP quantum well lasers grown by metal organic vapour phase epitaxy on a GaP substrate are reported. At room temperature, the devices show a threshold current density of 4.0 kAcm(-2) at a lasing wavelength of 981 nm for a cavity length of 1 mm and a characteristic temperature of 58 K in the temperature region of 220-295 K. These improvements further verify the possible application for the novel III/V Ga(NAsP)/GaP material system to integrate long-term stable laser diodes in a standard CMOS-compatible electronic chip

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