Open AccessMonolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates
Author(s) -
P. Chyurlia,
F. Sèmond,
T. Lester,
J. A. Bardwell,
S. Rolfe,
H. Tang,
N. G. Tarr
Publication year - 2010
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2010.3167
Subject(s) - materials science , silicon , optoelectronics , substrate (aquarium) , hybrid silicon laser , silicon on insulator , oceanography , geology
AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon <111> substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon <111> substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.Peer reviewed: YesNRC publication: Ye
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