1.53 [micro sign]m GaInNAsSb laser diodes grown on GaAs(100) | Zendy

J. A. Gupta | Zendy; Pedro Barrios | Zendy; X. Zhang | Zendy; G. Pakulski | Zendy; X. Wu | Zendy

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1.53 [micro sign]m GaInNAsSb laser diodes grown on GaAs(100)

Author(s) -

J. A. Gupta,

Pedro Barrios,

X. Zhang,

G. Pakulski,

X. Wu

Publication year - 2005

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el:20057623

Subject(s) - optoelectronics , laser , materials science , diode , lasing threshold , sign (mathematics) , quantum well , quantum well laser , ridge , wavelength , semiconductor laser theory , optics , quantum dot laser , physics , mathematical analysis , mathematics , paleontology , biology

GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532\u2005nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969\u2005A\u2005cm\u22122 per quantum well in pulsed mode, with characteristic temperatures as high as 90\u2005K.Peer reviewed: NoNRC publication: Ye

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