Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 [micro sign]m | Zendy

J. A. Gupta | Zendy; Pedro Barrios | Zendy; Xuefeng Zhang | Zendy; J. Lapointe | Zendy; Daniel Poitras | Zendy; G. Pakulski | Zendy; X. Wu | Zendy; A. Delâge | Zendy

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Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 [micro sign]m

Author(s) -

J. A. Gupta,

Pedro Barrios,

Xuefeng Zhang,

J. Lapointe,

Daniel Poitras,

G. Pakulski,

X. Wu,

A. Delâge

Publication year - 2005

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el:20052712

Subject(s) - continuous wave , materials science , optoelectronics , molecular beam epitaxy , laser , diode , lasing threshold , wavelength , semiconductor laser theory , ridge , sign (mathematics) , optics , epitaxy , physics , nanotechnology , paleontology , mathematical analysis , mathematics , layer (electronics) , biology

The first 1.55\u2005\ub5m room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550\u2005nm near threshold, increasing to 1553\u2005nm at thermal rollover. The CW threshold current was 132\u2005mA for a 3\ud7589\u2005\ub5m device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70\ub0C.Peer reviewed: NoNRC publication: Ye

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