Fabrication and characterisation of solar-blind Al0.6Ga0.4N MSM photodetectors | Zendy

Necmi Bıyıklı | Zendy; Ïbrahim Kimukin | Zendy; Turgut Tut | Zendy; O. Aytür | Zendy; Ekmel Özbay | Zendy

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Fabrication and characterisation of solar-blind Al0.6Ga0.4N MSM photodetectors

Author(s) -

Necmi Bıyıklı,

Ïbrahim Kimukin,

Turgut Tut,

O. Aytür,

Ekmel Özbay

Publication year - 2005

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el:20048028

Subject(s) - responsivity , optoelectronics , materials science , photodiode , fabrication , photodetector , metalorganic vapour phase epitaxy , detector , microwave , optics , physics , telecommunications , nanotechnology , epitaxy , computer science , medicine , alternative medicine , pathology , layer (electronics)

Solar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with ∼255 nm cutoff wavelength. © IEE 2005

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