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Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
Author(s) -
K.D. Choquette,
John F. Klem,
A. J. Fischer,
O. Blum,
A.A. Allerman,
I. J. Fritz,
S. R. Kurtz,
W.G. Breiland,
R. M. Sieg,
K.M. Geib,
Jeffrey W. Scott,
R.L. Naone
Publication year - 2000
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el:20000928
Subject(s) - laser , lasing threshold , optoelectronics , materials science , quantum well , optics , continuous wave , wavelength , sign (mathematics) , aperture (computer memory) , semiconductor laser theory , vertical cavity surface emitting laser , semiconductor , physics , acoustics , mathematical analysis , mathematics

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