Open AccessA Robust on‐Wafer Large Signal Transistor Characterization Method at mm‐Wave Frequency
Author(s) -
Su Jiangtao,
Cai Jialin,
Zheng Xing,
Sun Lingling
Publication year - 2019
Publication title -
chinese journal of electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.267
H-Index - 25
eISSN - 2075-5597
pISSN - 1022-4653
DOI - 10.1049/cje.2019.05.013
Subject(s) - wafer , transistor , high electron mobility transistor , signal (programming language) , calibration , electronic engineering , test bench , materials science , electronic circuit , power (physics) , computer science , optoelectronics , electrical engineering , physics , engineering , voltage , embedded system , quantum mechanics , programming language
Accurate on‐wafer large signal characterization of RF transistor is crucial for the optimum design of wireless communication circuits. We report a novel and systematic measurement method for the accurate acquisition of input and output power of on‐wafer transistors up to 40GHz. This method employs external couplers to extract the travelling waves, combined with a novel large signal calibration algorithm to calculate the power at on‐wafer probe tip. The accuracy of this method was bench marked versus conventional approaches in a real measurement bench, and further been verified by characterizing the large signal response of a 0.25μm GaN HEMT device. It is concluded that the measurement uncertainty has been greatly decreased with this new method, especially at mm‐wave frequencies.