Open AccessScalable Multi‐harmonic Large‐Signal Model for AlGaN/GaN HEMTs Including a Geometry‐Dependent Thermal Resistance
Author(s) -
Wang Changsi,
Xu Yuehang,
Wen Zhang,
Chen Zhikai,
Xu Ruimin
Publication year - 2017
Publication title -
chinese journal of electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.267
H-Index - 25
eISSN - 2075-5597
pISSN - 1022-4653
DOI - 10.1049/cje.2017.07.014
Subject(s) - scalability , materials science , thermal , signal (programming language) , harmonic , optoelectronics , thermal resistance , computer science , acoustics , physics , database , meteorology , programming language
scalable large‐signal model of Al‐ GaN/GaN High electron mobility transistors (HEMTs) suitable for multi‐harmonic characterizations is presented. This model is fulfilled utilizing an improved drain‐source current ( I ds ) formulation with a geometry‐dependent thermal resistance ( R th ) and charge‐trapping modification. The I ds model is capable of accurately modeling the highorder transconductance ( g m ), which is significant for the prediction of multi‐harmonic characteristics. The thermal resistance is identified by the electro‐thermal Finite element method (FEM) simulations, which are physically and easily scalable with the finger numbers, unit gate width and power dissipations of the device. Accurate predictions of the quiescent currents, S ‐parameters up to 40GHz, and large‐signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.