Open AccessA 5.7–6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit
Author(s) -
Zheng Ruiqing,
Zhang Guohao,
Yu Kai,
Li Sizhen,
Zheng Yaohua
Publication year - 2017
Publication title -
chinese journal of electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.267
H-Index - 25
eISSN - 2075-5597
pISSN - 1022-4653
DOI - 10.1049/cje.2016.11.013
Subject(s) - heterojunction bipolar transistor , optoelectronics , amplifier , materials science , electrical engineering , bipolar junction transistor , transistor , voltage , engineering , cmos
This paper describes the design of a 5.7– 6.4GHz GaAs Heterojunction bipolar transistor (HBT) power amplifier for broadband wireless application such as wireless metropolitan area networks. A bias circuit is proposed which enhances the power gain and provides a good linearity. Using the wideband matching network techniques with trap circuits embedded to filter the harmonics and the diode‐based linearizing techniques, a broadband power amplifier module was obtained which exhibited a gain above 28dB. This is about 1dB improvement compared with those normal bias circuits at a supply voltage of 5V in the frequency range of 5.7–6.4GHz, measured with Continuous wave(CW) signals. The saturated output power was greater than 33dBm in 5.7–6.4GHz and the output 1dB compression point was greater than 31dBm. The phase deviation was less than 5 degrees when the output power below 33dBm. The second and third order harmonic components were also less than − 45dBc and − 50dBc.