Open AccessA 3.9ppm/◦C 8.8nW and High PSRR Subthreshold CMOS Multiple Voltage Reference
Author(s) -
Jiang Mei,
Li Yongquan,
Yang Zhi
Publication year - 2017
Publication title -
chinese journal of electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.267
H-Index - 25
eISSN - 2075-5597
pISSN - 1022-4653
DOI - 10.1049/cje.2016.11.005
Subject(s) - subthreshold conduction , power supply rejection ratio , cmos , voltage , electrical engineering , optoelectronics , materials science , computer science , transistor , engineering , amplifier
A voltage reference with low Temperature coefficient (TC) and three outputs, which is compatible with high Power supply rejection ratio (PSRR) and low power consumption, is presented in this paper. The proposed reference circuit operating with all transistors biased in subthreshold region, provides three reference voltages of 340mV, 680mV, and 1020mV. Subthreshold MOSFET design allows the circuit to work with minimum current consumption of 7.4nA at the supply voltage 1.2V. The mean line sensitivity is 1.7%/V under a supply voltages ranging from 1.2 to 3V. The Power supply rejection ratio (PSRR) of 340mV output voltage simulated at 100Hz and 10MHz is over than 51.9dB and 120.4dB, respectively. Monte Carlo simulation shows a mean TC is 3.9ppm/ ◦ C with a standard deviation of 1ppm/ ◦ C over a set of 500 samples, in a temperature range from –30 ◦ C to 100 ◦ C. The active area of the presented voltage reference is 0.003mm 2 .