Open AccessA Practical Design of X‐Band Receiver Front‐End in 65‐nm CMOS
Author(s) -
Lu Zhijian,
Guan Rui,
Li Xiaoyong,
Zhou Jianjun
Publication year - 2016
Publication title -
chinese journal of electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.267
H-Index - 25
eISSN - 2075-5597
pISSN - 1022-4653
DOI - 10.1049/cje.2016.05.004
Subject(s) - cmos , electrical engineering , local oscillator , noise figure , sideband , amplifier , front and back ends , low noise amplifier , physics , noise (video) , power (physics) , compatible sideband transmission , electronic engineering , computer science , engineering , radio frequency , quantum mechanics , artificial intelligence , image (mathematics) , operating system
A low‐cost low‐power area‐efficient receiver front‐end prototype for X‐band applications is presented. The front‐end primarily consists of 3 blocks: a singleended input differential‐output Low noise amplifier (LNA), a double balanced down‐converter, and Inter‐frequency (IF) buffers providing single‐ended output. Including are also Low dropout regulators (LDO) and Electrostatic discharge (ESD) protection circuits coinciding with the forgoing blocks. Local oscillator (LO) frequency is chosen such that output signal locates in L/S‐band for extending subsequent applications. Experimentally exhibiting a conversion gain of around 44dB with 7.5‐dB Single‐sideband (SSB) Noise figure (NF), the front‐end totally draws 24mA from an external 3.3‐V supply. Fabricated in a 65‐nm CMOS technology, this compact receiver occupies an area of only 0.22mm 2