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Measurement of the electric field distribution and potentials on the object surface in an emission electron microscope without restriction of the electron beams
Author(s) -
Nepijko S. A.,
Gloskovskii A.,
Sedov N. N.,
Schönhense G.
Publication year - 2003
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1046/j.1365-2818.2003.01199.x
Subject(s) - electric field , electron , field electron emission , microscope , electron microscope , diaphragm (acoustics) , voltage , optics , materials science , silicon , atomic physics , physics , optoelectronics , acoustics , quantum mechanics , loudspeaker
Summary An emission electron microscope without restriction of the electron beams was used to visualize and measure the distribution of electric fields and potentials on the surface under study. Investigations of this kind can be performed in an emission electron microscope without any aperture diaphragm. The potentialities of this method have been demonstrated using measurements with a silicon p–n junction to which a voltage has been applied in the reverse direction. The quantitative analysis becomes more complicated if the specimen is characterized by a heterogeneous intensity distribution of the electron emission from different areas of its surface. In the latter case two images obtained at different accelerating voltages (i.e. different voltages of the microscope extractor) provide the information necessary for an analysis of electric field and potential distributions.