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Near‐field observation of carrier diffusion in GaAs quantum structures under high magnetic fields
Author(s) -
Tokizaki T.,
Onuki T.,
Tsuchiya T.,
Yokoyama H.
Publication year - 2003
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1046/j.1365-2818.2003.01186.x
Subject(s) - magnetic field , luminescence , photoluminescence , diffusion , lorentz force , near field scanning optical microscope , materials science , quantum well , scanning electron microscope , optics , condensed matter physics , resolution (logic) , optical microscope , image resolution , chemistry , optoelectronics , physics , laser , quantum mechanics , artificial intelligence , computer science , thermodynamics
Summary Photoluminescence from a two‐dimensional electron‐gas system in GaAs single hetero‐structures was investigated using a scanning near‐field optical microscope (SNOM) operated at cryogenic temperatures under high magnetic fields. The local intensity of the luminescence increased 600‐fold that at 0 T as the magnetic field was increased up to 6 T. The enhancement depended on the spatial resolution of the SNOM. These characteristics are explained by the suppression of the diffusion of photocarriers caused by the Lorentz force in magnetic fields.