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Electron energy‐loss near edge structure (ELNES) of InGaN quantum wells
Author(s) -
Keast V. J.,
Kappers M. J.,
Humphreys C. J.
Publication year - 2003
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1046/j.1365-2818.2003.01180.x
Subject(s) - ionization , quantum well , electron , atomic physics , spectral line , enhanced data rates for gsm evolution , electronic structure , lattice (music) , impact ionization , ionization energy , materials science , molecular physics , laser , condensed matter physics , chemistry , physics , optics , nuclear physics , ion , telecommunications , organic chemistry , astronomy , computer science , acoustics
Summary Lasers and light‐emitting diodes (LEDs) that emit in the blue to green region are often based on In x Ga 1– x N quantum well structures. Ionization edges in the electron energy‐loss spectrum contain fine structures (called the energy‐loss near edge structure (ELNES)) and provide information about the electronic structure. In this paper we compare the experimental and calculated ELNES for the N‐K ionization edge of In x Ga 1– x N quantum wells. When the effects of the core‐hole are included in the calculations, agreement between experimental and calculated spectra is very good. Strain has been shown to accentuate the effects of In on the ELNES and moves the ionization edge onset down in energy, relative to the other features. These results suggest that ELNES may provide an alternative method to lattice imaging to determine the presence of strain in this system.