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Dynamic chemical mapping near a Si/SiO 2 interface at elevated temperatures using plasmon‐loss images
Author(s) -
Sasaki K.,
Tsukimoto S.,
Konno M.,
Kamino T.,
Saka H.
Publication year - 2001
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1046/j.1365-2818.2001.00911.x
Subject(s) - plasmon , materials science , interface (matter) , in situ , resolution (logic) , high resolution , reduction (mathematics) , chemical imaging , surface plasmon , optics , optoelectronics , chemistry , computer science , remote sensing , physics , geology , composite material , geometry , organic chemistry , mathematics , capillary number , artificial intelligence , capillary action , hyperspectral imaging
Plasmon‐loss imaging was applied to chemical mapping during an in‐situ heating experiment. The technique was applied to observation of vibration of a Si/SiO 2 interface which took place during reduction of SiO 2 at high temperature. The chemical maps of Si and SiO 2 were recorded dynamically using a conventional TV‐VTR system at a time resolution of 1/30 s.