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In situ high resolution electron microscopy/electron energy loss spectroscopy observation of wetting of a Si surface by molten Al
Author(s) -
Tsukimoto S.,
Arai S.,
Konno M.,
Kamino T.,
Sasaki K.,
Saka H.
Publication year - 2001
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1046/j.1365-2818.2001.00905.x
Subject(s) - wetting , electron microscope , electron energy loss spectroscopy , materials science , in situ , spectroscopy , energy dispersive x ray spectroscopy , energy filtered transmission electron microscopy , resolution (logic) , low energy electron microscopy , electron , high resolution , microscopy , scanning electron microscope , analytical chemistry (journal) , nanotechnology , chemistry , optics , transmission electron microscopy , scanning transmission electron microscopy , physics , composite material , chromatography , quantum mechanics , remote sensing , organic chemistry , artificial intelligence , geology , computer science
Electron energy loss spectroscopy was used to observe the segregation of Al on a Si surface above the melting point of Al. A mixture of Al and Si particles was heated above the melting point of Al in a vacuum of 1 × 10 −5 Pa. The Si surface, which initially had been covered with an amorphous oxide layer before heating, became clean and atomically facetted when the Al melted. It was shown that the Si surface was segregated with Al.