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Dislocation mobility and electronic effects in semiconductor compounds
Author(s) -
Vanderschaeve G.,
Levade C.,
Caillard D.
Publication year - 2001
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1046/j.1365-2818.2001.00901.x
Subject(s) - semiconductor , dislocation , transmission electron microscopy , materials science , condensed matter physics , semiconductor materials , crystallography , optoelectronics , nanotechnology , chemistry , physics , composite material
In situ transmission electron microscopy experiments provide a unique way to investigate in real time the dislocation behaviour at a microscopic scale and to decide which elementary process controls the dislocation glide in semiconductors. In this review the experimental results obtained on different semiconductors are presented and discussed. Particular attention is devoted to the radiation‐enhanced glide process.