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Advantages of stereo imaging of metallic surfaces with low voltage backscattered electrons in a field emission scanning electron microscope
Author(s) -
Richards R. G.,
Wieland M.,
Textor M.
Publication year - 2000
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1046/j.1365-2818.2000.00717.x
Subject(s) - electron , field electron emission , optics , scanning electron microscope , materials science , electron microscope , microscope , field emission microscopy , physics , diffraction , nuclear physics
High emission current backscattered electron (HC‐BSE) stereo imaging at low accelerating voltages (≤ 5 keV) using a field emission scanning electron microscope was used to display surface structure detail. Samples of titanium with high degrees of surface roughness, for potential medical implant applications, were imaged using the HC‐BSE technique at two stage tilts of + 3° and − 3° out of the initial position. A digital stereo image was produced and qualitative height, depth and orientation information on the surface structures was observed. HC‐BSE and secondary electron (SE) images were collected over a range of accelerating voltages. The low voltage SE and HC‐BSE stereo images exhibited enhanced surface detail and contrast in comparison to high voltage (> 10 keV) BSE or SE stereo images. The low voltage HC‐BSE stereo images displayed similar surface detail to the low voltage SE images, although they showed more contrast and directional sensitivity on surface structures. At or below 5 keV, only structures a very short distance into the metallic surface were observed. At higher accelerating voltages a greater appearance of depth could be seen but there was less information on the fine surface detail and its angular orientation. The combined technique of HC‐BSE imaging and stereo imaging should be useful for detailed studies on material surfaces and for biological samples with greater contrast and directional sensitivity than can be obtained with current SE or BSE detection modes.