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Thickness measurement of thin dielectric films by evanescent total reflection fluorescence
Author(s) -
Benešová M.,
Tománek P.
Publication year - 1999
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1046/j.1365-2818.1999.0566a.x
Subject(s) - evanescent wave , dielectric , materials science , refractive index , optics , fluorescence , total internal reflection , reflection (computer programming) , electric field , optoelectronics , physics , quantum mechanics , computer science , programming language
The electric field of an evanescent wave generates fluorescence in the interface between a dielectric surface and an adjacent, fluorescing, medium of lower refractive index. The difference between the fluorescing signals from covered and noncovered surfaces enables nondestructive measurement of the film thickness to be made in the range 1–15 nm.