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Applications of scanning optical microscopy in materials science to detect bulk microdefects in semiconductors
Author(s) -
Török P.,
Mule'Stagno L.
Publication year - 1997
Publication title -
journal of microscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.569
H-Index - 111
eISSN - 1365-2818
pISSN - 0022-2720
DOI - 10.1046/j.1365-2818.1997.2420800.x
Subject(s) - optical microscope , microscopy , semiconductor , materials science , scanning probe microscopy , microscope , nanotechnology , optics , scanning electron microscope , optoelectronics , physics
We review the application of scanning optical microscopy to bulk microdefect detection in semiconductor materials. After an extensive literature review we summarize theoretical aspects of the scanning infra‐red microscope and describe the theory of contrast formation. We also show experimental examples of scanning infra‐red images taken by different modes of the microscope and give an experimental confirmation of the contrast theory.