Open AccessNesting-like band gap in bismuth sulfide Bi2S3
Author(s) -
W. M. Linhart,
Szymon J. Zelewski,
P. Scharoch,
Filip Dybała,
R. Kudrawiec
Publication year - 2021
Publication title -
journal of materials chemistry c
Language(s) - German
Resource type - Journals
SCImago Journal Rank - 1.899
H-Index - 128
eISSN - 2050-7534
pISSN - 2050-7526
DOI - 10.1039/d1tc03625d
Subject(s) - nesting (process) , bismuth , materials science , band gap , semiconductor , absorption (acoustics) , enhanced data rates for gsm evolution , direct and indirect band gaps , absorption edge , condensed matter physics , optoelectronics , physics , metallurgy , telecommunications , computer science , composite material
Bi 2 S 3 is a nesting-like band gap semiconductor, where direct optical transition dominates above the indirect one, resulting in a strong absorption edge and excitonic emission.
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