Open AccessRotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality
Author(s) -
María Chiara Spadaro,
Simon Escobar Steinvall,
Nelson Y. Dzade,
Sara MartíSánchez,
Pol Torres-Vila,
Elias Z. Stutz,
Mahdi Zamani,
Rajrupa Paul,
Jean-Baptiste Leran,
Anna Fontcuberta i Morral,
Jordi Arbiol
Publication year - 2021
Publication title -
nanoscale
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.038
H-Index - 224
eISSN - 2040-3372
pISSN - 2040-3364
DOI - 10.1039/d1nr06190a
Subject(s) - mechanism (biology) , epitaxy , materials science , crystallography , nanotechnology , optoelectronics , chemistry , physics , layer (electronics) , quantum mechanics
Growth process for Zn 3 P 2 nanowires grown on InP at different angles by SAE and formation of rotated domains at (100) and (101) facets.
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