Open AccessRotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality
Author(s) -
Maria Chiara Spadaro,
Simon Escobar Steinvall,
Nelson Y. Dzade,
Sara Martı́-Sánchez,
Pol Torres-Vila,
Elias Z. Stutz,
Mahdi Zamani,
Rajrupa Paul,
Jean-Baptiste Leran,
Anna Fontcuberta i Morral,
Jordi Arbiol
Publication year - 2021
Publication title -
nanoscale
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.038
H-Index - 224
eISSN - 2040-3372
pISSN - 2040-3364
DOI - 10.1039/d1nr06190a
Subject(s) - epitaxy , materials science , facet (psychology) , atomic units , band gap , dangling bond , nanotechnology , optoelectronics , nanowire , crystal (programming language) , chemical physics , fabrication , gallium phosphide , condensed matter physics , silicon , chemistry , layer (electronics) , physics , psychology , social psychology , personality , quantum mechanics , computer science , big five personality traits , programming language , medicine , alternative medicine , pathology
Growth process for Zn 3 P 2 nanowires grown on InP at different angles by SAE and formation of rotated domains at (100) and (101) facets.