Open AccessPolymer field-effect transistor memory based on a ferroelectric nylon gate insulator
Author(s) -
Saleem Anwar,
Beomjin Jeong,
Mohammad Mahdi Abolhasani,
Wojciech Zajączkowski,
Morteza Hassanpour Amiri,
Kamal Asadi
Publication year - 2020
Publication title -
journal of materials chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.899
H-Index - 128
eISSN - 2050-7534
pISSN - 2050-7526
DOI - 10.1039/c9tc06868f
Subject(s) - materials science , ferroelectricity , insulator (electricity) , ferroelectric polymers , transistor , polymer , field effect transistor , optoelectronics , nylon 6 , composite material , electrical engineering , dielectric , voltage , engineering
Ultra-smooth thin-films of nylons, one of the most successful commercialized polymers, have been realized for the application in ferroelectric field effect transistors.
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