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Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells
Author(s) -
Huiyun Wei,
Jionghua Wu,
Peng Qiu,
Sanjie Liu,
Yingfeng He,
Mingzeng Peng,
Dongmei Li,
Qingbo Meng,
Francisco Zaera,
Xinhe Zheng
Publication year - 2019
Publication title -
journal of materials chemistry a
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.637
H-Index - 212
eISSN - 2050-7488
pISSN - 2050-7496
DOI - 10.1039/c9ta08929b
Subject(s) - perovskite (structure) , materials science , planar , layer (electronics) , gallium nitride , plasma , electron , optoelectronics , nitride , gallium , thin film , atomic layer deposition , nanotechnology , chemistry , crystallography , metallurgy , physics , computer science , computer graphics (images) , quantum mechanics

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