Open AccessGrowth of highly oriented MoS2via an intercalation process in the graphene/SiC(0001) system
Author(s) -
Paweł Piotr Michałowski,
Piotr Knyps,
P. Ciepielewski,
P. Caban,
E. Dumiszewska,
G. Kowalski,
Mateusz Tokarczyk,
J. M. Baranowski
Publication year - 2019
Publication title -
physical chemistry chemical physics/pccp. physical chemistry chemical physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.053
H-Index - 239
eISSN - 1463-9084
pISSN - 1463-9076
DOI - 10.1039/c9cp03846a
Subject(s) - graphene , intercalation (chemistry) , nucleation , materials science , annealing (glass) , secondary ion mass spectrometry , substrate (aquarium) , crystallization , layer (electronics) , diffraction , coalescence (physics) , chemical physics , chemical engineering , crystallography , ion , nanotechnology , composite material , chemistry , inorganic chemistry , optics , engineering , oceanography , physics , organic chemistry , geology , astrobiology
A method of growing highly oriented MoS 2 between graphene and SiC substrate is presented.