Growth of highly oriented MoS2via an intercalation process in the graphene/SiC(0001) system | Zendy

Paweł Piotr Michałowski | Zendy; Piotr Knyps | Zendy; P. Ciepielewski | Zendy; P. Caban | Zendy; E. Dumiszewska | Zendy; G. Kowalski | Zendy; Mateusz Tokarczyk | Zendy; Jacek Baranowski | Zendy

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Growth of highly oriented MoS₂via an intercalation process in the graphene/SiC(0001) system

Author(s) -

Paweł Piotr Michałowski,

Piotr Knyps,

P. Ciepielewski,

P. Caban,

E. Dumiszewska,

G. Kowalski,

Mateusz Tokarczyk,

Jacek Baranowski

Publication year - 2019

Publication title -

physical chemistry chemical physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.053

H-Index - 239

eISSN - 1463-9084

pISSN - 1463-9076

DOI - 10.1039/c9cp03846a

Subject(s) - graphene , intercalation (chemistry) , nucleation , materials science , annealing (glass) , secondary ion mass spectrometry , substrate (aquarium) , crystallization , layer (electronics) , diffraction , coalescence (physics) , chemical physics , chemical engineering , crystallography , ion , nanotechnology , composite material , chemistry , inorganic chemistry , optics , engineering , oceanography , physics , organic chemistry , geology , astrobiology

A method of growing highly oriented MoS 2 between graphene and SiC substrate is presented.

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