Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres
Author(s) -
Anna Regoutz,
Gregor Pobegen,
Thomas Aichinger
Publication year - 2018
Publication title -
journal of materials chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.899
H-Index - 128
eISSN - 2050-7534
pISSN - 2050-7526
DOI - 10.1039/c8tc02935k
Subject(s) - x ray photoelectron spectroscopy , materials science , interface (matter) , semiconductor , oxide , optoelectronics , metal , engineering physics , analytical chemistry (journal) , chemical engineering , metallurgy , composite material , chemistry , environmental chemistry , capillary number , capillary action , engineering
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