Atomic layer deposition for membrane interface engineering | Zendy

HaoCheng Yang | Zendy; Ruben Z. Waldman | Zendy; Zhaowei Chen | Zendy; Seth B. Darling | Zendy

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Atomic layer deposition for membrane interface engineering

Author(s) -

HaoCheng Yang,

Ruben Z. Waldman,

Zhaowei Chen,

Seth B. Darling

Publication year - 2018

Publication title -

nanoscale

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.038

H-Index - 224

eISSN - 2040-3372

pISSN - 2040-3364

DOI - 10.1039/c8nr08114j

Subject(s) - atomic layer deposition , layer (electronics) , materials science , deposition (geology) , interface (matter) , membrane , chemical engineering , nanotechnology , composite material , chemistry , engineering , geology , paleontology , biochemistry , sediment , capillary number , capillary action

In many applications, interfaces govern the performance of membranes. Structure, chemistry, electrostatics, and other properties of interfaces can dominate the selectivity, flux, fouling resistance, and other critical aspects of membrane functionality. Control over membrane interfacial properties, therefore, is a powerful means of tailoring performance. In this Minireview, we discuss the application of atomic layer deposition (ALD) and related techniques in the design of novel membrane interfaces. We discuss recent literature in which ALD is used to (1) modify the surface chemistry and interfacial properties of membranes, (2) tailor the pore sizes and separation characteristics of membranes, and (3) enable novel advanced functional membranes.

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