Thermochemistry of germanium and organogermanium compounds
Author(s) -
Rosa Becerra,
Robin Walsh
Publication year - 2018
Publication title -
physical chemistry chemical physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.053
H-Index - 239
eISSN - 1463-9084
pISSN - 1463-9076
DOI - 10.1039/c8cp06208k
Subject(s) - thermochemistry , germanium , germanium compounds , chemistry , computational chemistry , inorganic chemistry , organic chemistry , silicon
This article reviews the current state of thermochemistry (enthalpies of formation) of germanium and organogermanium compounds. While the emphasis is on data from experimental measurements, results of quantum chemical (ab initio) calculations are also included. We provide a set of current best values for GeX 4 compounds (X = H, Me, F, Cl, Br, I) as well as mixed GeX n Y 4-n compounds. Also included are Ge/C/H, Ge/C/H/O and Ge/C/H/N compounds and Ge 2 and Ge 3 containing molecules. Further inclusions are data for species such as GeX 3 (free radicals), GeX 2 (germylenes) and π-bonded molecules which play prominent roles as intermediates in many thermal and photochemical reactions of germanium compounds. Bond dissociation enthalpies are derived for most commonly encountered Ge-X bonds. The evaluation of preferred values is assisted by exploiting relationships (increments, substituent effects) within specific series and between series.
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