Open AccessHigh electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states
Author(s) -
Jaekyun Kim,
Bitna Yoon,
Jae Hyun Kim,
Young Shik Choi,
Young Wan Kwon,
Sung Kyu Park,
Kwang Seob Jeong
Publication year - 2017
Publication title -
rsc advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.746
H-Index - 148
ISSN - 2046-2069
DOI - 10.1039/c7ra07193k
Subject(s) - quantum dot , electron , quantum , conduction band , chemistry , electron mobility , atomic physics , quantum point contact , physics , condensed matter physics , materials science , nanotechnology , quantum well , quantum mechanics , laser
Steady-state electron occupation of the lowest quantum state in the conduction band of a colloidal quantum dot gives rise to unique electrical properties. An electron mobility of 1.29 cm 2 V −1 s −1 was measured in a mercury sulfide quantum dot FET.