Open AccessHigh electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states
Author(s) -
Jaekyun Kim,
Bitna Yoon,
Jaehyun Kim,
Yunchang Choi,
Young-Wan Kwon,
Sung Kyu Park,
Kwang Seob Jeong
Publication year - 2017
Publication title -
rsc advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.746
H-Index - 148
ISSN - 2046-2069
DOI - 10.1039/c7ra07193k
Subject(s) - quantum dot , electron , quantum , conduction band , chemistry , electron mobility , atomic physics , quantum point contact , physics , condensed matter physics , materials science , nanotechnology , quantum well , quantum mechanics , laser
Steady-state electron occupation of the lowest quantum state in the conduction band of a colloidal quantum dot gives rise to unique electrical properties. An electron mobility of 1.29 cm 2 V −1 s −1 was measured in a mercury sulfide quantum dot FET.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom