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Degradation of topological surface state by nonmagnetic S doping in SrxBi2Se3
Author(s) -
Hui Huang,
Juanjuan Gu,
Min Tan,
Qinglong Wang,
Ping Ji,
Xueyou Hu
Publication year - 2017
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/srep45565
Subject(s) - degradation (telecommunications) , surface (topology) , state (computer science) , topology (electrical circuits) , doping , computer science , physics , condensed matter physics , mathematics , telecommunications , geometry , combinatorics , algorithm
Research on possible topological superconductivity has grown rapidly over the past several years, from fundamental studies to the development of next generation technologies. Recently, it has been reported that the Sr x Bi 2 Se 3 exhibits superconductivity with topological surface state, making this compound a promising candidate for investigating possible topological superconductivity. However, whether or not the topological surface state is robust against impurities is not clear in this system. Here we report a detailed investigation on the lattice structure, electronic and magnetic properties, as well as the topological superconducting properties of Sr x Bi 2 Se 3− y S y samples. It is found that the superconducting transition temperature keeps nearly unchanged in all samples, despite of a gradual decrease of the superconducting shielding volume fraction with increasing S doping content. Meanwhile, the Shubnikov-de Hass oscillation results of the Sr x Bi 2 Se 3− y S y samples reveal that the topological surface states are destroyed in S doped samples, suggesting the topological character is degraded by nonmagnetic dopants.

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