Open AccessEffect of gallium environment on infrared emission in Er3+-doped gallium– antimony– sulfur glasses
Author(s) -
Qing Jiao,
Ge Li,
Lini Li,
Changgui Lin,
Guoxiang Wang,
Zijun Liu,
Shixun Dai,
Tao Xu,
Qinyuan Zhang
Publication year - 2017
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/srep41168
Subject(s) - gallium , raman spectroscopy , infrared , doping , sulfide , ion , antimony , materials science , analytical chemistry (journal) , sulfur , quenching (fluorescence) , dissociation (chemistry) , luminescence , inorganic chemistry , emission intensity , chemistry , fluorescence , optics , optoelectronics , metallurgy , physics , organic chemistry , chromatography
Gallium-based Ga–Sb–S sulfide glasses was elaborated and studied. A relationship between the structure, composition, and optical properties of the glass has been established. The effects of the introduction of Ga on the structure using infrared and Raman spectroscopies and on the Er 3+ -doped IR emission have been discussed. The results show that incorporation of Ga induced the dissociation of [SbS 3 ] pyramids units and the formation of tetrahedral [GaS 4 ] units. The dissolved rare earth ions are separated around the Ga–S bonding and the infrared emission quenching are controlled. Moreover, continuous introduction of Er ions into the glass forms more Er–S bonds through the further aggregation surrounding the [GaS 4 ] units. In return, the infrared emission intensity decreased with excessive Er ion addition. This phenomenon is correlated with the recurrence concentration quenching effect induced by the increase of [GaS 4 ] units.