z-logo
open-access-imgOpen Access
Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer
Author(s) -
Yogeenth Kumaresan,
Yusin Pak,
Namsoo Lim,
Yonghun Kim,
Min Ji Park,
Sung Min Yoon,
Hyoc Min Youn,
Heon Lee,
Byoung Hun Lee,
Gun Young Jung
Publication year - 2016
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/srep37764
Subject(s) - materials science , thin film transistor , transistor , layer (electronics) , optoelectronics , threshold voltage , dielectric , substrate (aquarium) , bend radius , stacking , flexible electronics , composite material , bending , gate dielectric , voltage , electrical engineering , oceanography , physics , nuclear magnetic resonance , geology , engineering
Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O 2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm 2 /Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 10 5 . Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here