Open AccessHighly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer
Author(s) -
Yogeenth Kumaresan,
Yusin Pak,
Namsoo Lim,
Yonghun Kim,
Min Ji Park,
Sung Min Yoon,
Hyoc Min Youn,
Heon Lee,
Byoung Hun Lee,
Gun Young Jung
Publication year - 2016
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/srep37764
Subject(s) - materials science , thin film transistor , transistor , layer (electronics) , optoelectronics , threshold voltage , dielectric , substrate (aquarium) , bend radius , stacking , flexible electronics , composite material , bending , gate dielectric , voltage , electrical engineering , oceanography , physics , nuclear magnetic resonance , geology , engineering
Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O 2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm 2 /Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 10 5 . Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.