Open AccessControlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation
Author(s) -
Dae Kyoung Kim,
Kwang Sik Jeong,
Yu Kang,
Hyeok-Gu Kang,
Sang W. Cho,
SangOk Kim,
Dong Chan Suh,
Sun Jung Kim,
Mann Ho Cho
Publication year - 2016
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/srep34945
Subject(s) - x ray photoelectron spectroscopy , materials science , x ray absorption spectroscopy , oxide , silc , analytical chemistry (journal) , layer (electronics) , plasma , silicon , absorption spectroscopy , chemical engineering , nanotechnology , chemistry , optoelectronics , physics , chromatography , quantum mechanics , engineering , metallurgy
The structural stability and electrical performance of SiO 2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO 2 film (thickness ~ 5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO 2 films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiO x C y ) in the transition layer compared to that of conventionally grown (i.e., thermally grown) SiO 2 films. Moreover, the plasma-assisted SiO 2 films exhibited enhanced electrical characteristics, such as reduced frequency dispersion, hysteresis, and interface trap density ( D it ≈ 10 11 cm −2 · eV −1 ). In particular, stress induced leakage current (SILC) characteristics showed that the generation of defect states can be dramatically suppressed in metal oxide semiconductor (MOS) structures with plasma-assisted oxide layer due to the formation of stable Si-O bonds and the reduced concentrations of SiO x C y species defect states in the transition layer. That is, energetically stable interfacial states of high quality SiO 2 on SiC can be obtained by the controlling the formation of SiO x C y through the highly reactive direct plasma-assisted oxidation process.