Open AccessHelicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well
Author(s) -
J. B. Li,
Xiaofeng Wu,
G. W. Wang,
Yuanye Xu,
Zhichuan Niu,
X. H. Zhang
Publication year - 2016
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/srep31189
Subject(s) - photocurrent , helicity , spins , spintronics , transverse plane , condensed matter physics , physics , electric current , electron , optoelectronics , quantum mechanics , biology , ferromagnetism , anatomy
We report the observation of a new type of helicity-dependent photocurrent induced by an in-plane transverse direct electric current in an InAs quantum well. The amplitude of the photocurrent depends linearly on the transverse current. Moreover, the observed incident azimuth-angle dependence of this photocurrent is different from that induced by the circular photogalvanic effect. This new photocurrent appears as a result of an asymmetrical carrier distribution in both the conduction and valence bands induced by the transverse current. The photoexcited carrier density created by interband transition processes is thus modulated and leads to the observed new azimuth-angle dependence. The observed efficient generation of the helicity-dependent photocurrent offers an effective approach to manipulate electron spins in two-dimensional semiconductor systems with the added advantage of electrical control of the spin-related photocurrent in spintronic applications.