Open AccessFour-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure
Author(s) -
Yanping Wei,
Cunxu Gao,
Zhendong Chen,
Shibo Xi,
Weixia Shao,
Peng Zhang,
Guilin Chen,
Jiangong Li
Publication year - 2016
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/srep30002
Subject(s) - converse , materials science , ferromagnetism , condensed matter physics , magnetoelectric effect , magnetism , heterojunction , magnetization , remanence , feal , electric field , coupling (piping) , optoelectronics , magnetic field , physics , composite material , ferroelectricity , intermetallic , dielectric , mathematics , geometry , alloy , multiferroics , quantum mechanics
We report a stable, tunable and non-volatile converse magnetoelectric effect (ME) in a new type of FeAl/PIN-PMN-PT heterostructure at room temperature, with a giant electrical modulation of magnetization for which the maximum relative magnetization change (ΔM/M) is up to 66%. The 109° ferroelastic domain switching in the PIN-PMN-PT and coupling with the ferromagnetic (FM) film via uniaxial anisotropy originating from the PIN-PMN-PT (011) surface are the key roles in converse ME effect. We also propose here a new, four-state memory through which it is possible to modify the remanent magnetism state by adjusting the electric field. This work represents a helpful approach to securing electric-writing magnetic-reading with low energy consumption for future high-density information storage applications.