Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure | Zendy

Yanping Wei | Zendy; Cunxu Gao | Zendy; Zhendong Chen | Zendy; Shibo Xi | Zendy; Weixia Shao | Zendy; Peng Zhang | Zendy; Guilin Chen | Zendy; Jiangong Li | Zendy

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Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure

Author(s) -

Yanping Wei,

Cunxu Gao,

Zhendong Chen,

Shibo Xi,

Weixia Shao,

Peng Zhang,

Guilin Chen,

Jiangong Li

Publication year - 2016

Publication title -

scientific reports

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.24

H-Index - 213

ISSN - 2045-2322

DOI - 10.1038/srep30002

Subject(s) - converse , materials science , ferromagnetism , condensed matter physics , magnetoelectric effect , magnetism , heterojunction , magnetization , remanence , feal , electric field , coupling (piping) , optoelectronics , magnetic field , physics , composite material , ferroelectricity , intermetallic , dielectric , mathematics , geometry , alloy , multiferroics , quantum mechanics

We report a stable, tunable and non-volatile converse magnetoelectric effect (ME) in a new type of FeAl/PIN-PMN-PT heterostructure at room temperature, with a giant electrical modulation of magnetization for which the maximum relative magnetization change (ΔM/M) is up to 66%. The 109° ferroelastic domain switching in the PIN-PMN-PT and coupling with the ferromagnetic (FM) film via uniaxial anisotropy originating from the PIN-PMN-PT (011) surface are the key roles in converse ME effect. We also propose here a new, four-state memory through which it is possible to modify the remanent magnetism state by adjusting the electric field. This work represents a helpful approach to securing electric-writing magnetic-reading with low energy consumption for future high-density information storage applications.

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