Open AccessResistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application
Author(s) -
Sangram K. Pradhan,
Bo Xiao,
Saswat Mishra,
Alex Killam,
A. K. Pradhan
Publication year - 2016
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/srep26763
Subject(s) - graphene , materials science , non volatile memory , oxide , resistive random access memory , optoelectronics , reliability (semiconductor) , fabrication , layer (electronics) , scalability , amorphous solid , resistive touchscreen , nanotechnology , voltage , electronics , computer science , electrical engineering , power (physics) , chemistry , medicine , physics , alternative medicine , engineering , organic chemistry , pathology , quantum mechanics , database , metallurgy , computer vision
Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices.