Open AccessPulsed laser deposition of Zn(O,Se) layers in nitrogen background Pressure
Author(s) -
Akram Abdalla,
Sergei Bereznev,
Nicolae Spalatu,
Olga Volobujeva,
Natalja Sleptšuk,
Mati Danilson
Publication year - 2019
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-019-54008-1
Subject(s) - analytical chemistry (journal) , crystallite , raman spectroscopy , materials science , x ray photoelectron spectroscopy , substrate (aquarium) , pulsed laser deposition , band gap , amorphous solid , thin film , selenide , ternary operation , auger electron spectroscopy , phase (matter) , chemistry , crystallography , chemical engineering , optoelectronics , nanotechnology , metallurgy , optics , organic chemistry , geology , oceanography , computer science , engineering , selenium , chromatography , nuclear physics , programming language , physics
Zinc oxy-selenide Zn(O,Se) is a novel material, that can replace the toxic CdS buffer layer in thin film solar cells and other optoelectronic devices. In this paper a systematic study of the structural, optical and electrical properties of Zn(O,Se) layers, grown by pulsed laser deposition under 50 mTorr of nitrogen background pressure, over a wide range of the substrate temperature, from RT to 600 °C, is reported. XRD, Raman, HR-SEM, XPS, UV-Vis techniques and Hall effect measurements have been used to investigate the structural, and optoelectronic properties of Zn(O,Se) layers. XRD analysis revealed that the polycrystalline ternary Zn(O,Se) phase formed at 500 °C. Raman analysis confirmed the formation of the polycrystalline Zn(O,Se) phase at 500 °C and an amorphous phase at substrate temperatures below 500 °C. Similarly, XPS analysis accompanied with the modified Auger parameters confirmed formation of ternary Zn(O,Se) layer at 500 °C as well. HR-SEM investigation showed the growth of homogenous, dense and adherent films onto a glass substrate. Furthermore, optical studies revealed that all prepared films are practically transparent in the visible region of the spectrum, with a band gap around 3 eV. Hall effect measurements revealed that conductivity, and electron concentration, increased by four orders of magnitude at 600 °C. It was found, that nitrogen background pressure maintained stable ratios of elemental contents in the whole range of the substrate temperature for Zn(O,Se) layers.