Open AccessThickness-dependent photoelectric properties of MoS2/Si heterostructure solar cells
Author(s) -
Yipeng Zhao,
Gang Ouyang
Publication year - 2019
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-019-53936-2
Subject(s) - heterojunction , photoelectric effect , materials science , optoelectronics , silicon , relaxation (psychology) , solar cell , detailed balance , physics , statistical physics , psychology , social psychology
In order to obtain the optimal photoelectric properties of vertical stacked MoS 2 /Si heterostructure solar cells, we propose a theoretical model to address the relationship among film thickness, atomic bond identities and related physical quantities in terms of bond relaxation mechanism and detailed balance principle. We find that the vertical stacked MoS 2 /Si can form type II band alignment, and its photoelectric conversion efficiency (PCE) enhances with increasing MoS 2 thickness. Moreover, the optimal PCE in MoS 2 /Si can reach 24.76%, inferring that a possible design way can be achieved based on the layered transition metal dichalcogenides and silicon.