Open AccessInduced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors
Author(s) -
Xianzhe Liu,
Hua Xu,
Honglong Ning,
Kuankuan Lu,
Hongke Zhang,
Xiaochen Zhang,
Rihui Yao,
Zhiqiang Fang,
Xubing Lu,
Junbiao Peng
Publication year - 2018
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-018-22602-4
Subject(s) - materials science , thin film transistor , ohmic contact , amorphous solid , optoelectronics , silicon , layer (electronics) , oxide , electrode , tin , tin oxide , thin film , barrier layer , oxide thin film transistor , nanotechnology , doping , metallurgy , crystallography , chemistry
Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.