Open AccessThree dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors
Author(s) -
Ching-Ting Lee,
Chia Chi Chen,
Hsin Ying Lee
Publication year - 2018
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-018-22430-6
Subject(s) - thin film transistor , materials science , non blocking i/o , transistor , optoelectronics , thin film , layer (electronics) , nanotechnology , electrical engineering , chemistry , engineering , biochemistry , catalysis , voltage
The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.