Open AccessRapid Growth of Nanocrystalline Diamond on Single Crystal Diamond for Studies on Materials under Extreme Conditions
Author(s) -
Samuel L. Moore,
Gopi K. Samudrala,
Shane A. Catledge,
Yogesh K. Vohra
Publication year - 2018
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-018-19915-9
Subject(s) - diamond , materials science , nucleation , chemical vapor deposition , scanning electron microscope , raman spectroscopy , nanocrystalline material , crystal (programming language) , material properties of diamond , analytical chemistry (journal) , transmission electron microscopy , nanotechnology , chemical engineering , composite material , chemistry , optics , physics , organic chemistry , engineering , chromatography , computer science , programming language
Early stage nucleation morphologies of spatially localized nanocrystalline diamond (NCD) micro-anvils grown on (100)-oriented single crystal diamond (SCD) anvil surfaces were analyzed and investigated for applications in high pressure studies on materials. NCD was grown on SCD using Microwave Plasma Chemical Vapor Deposition (MPCVD) for brief time intervals ranging from 1–15 minutes. Early stage film morphologies were characterized using scanning electron microscopy (SEM) and Raman spectroscopy and were compared to films grown for several hours. Rapid nucleation and growth of NCD on SCD is demonstrated without any pre-growth seeding of the substrate surface. As grown NCD diamond micro-anvils on SCD were used to generate static pressure of 0.5 Terapascal (TPa) on a tungsten sample as measured by synchrotron x-ray diffraction in a diamond anvil cell. Atomic force microscopy (AFM) analysis after decompression from ultrahigh pressures showed that the detachment of the NCD stage occurred in the bulk of the SCD and not at the interface, suggesting significant adhesive bond strength between nanocrystalline and single crystal diamond.