
Interface and material engineering for zigzag slab lasers
Author(s) -
Fei Liu,
Siyu Dong,
Jinlong Zhang,
Hongfei Jiao,
Bin Ma,
Zhanshan Wang,
Xinbin Cheng
Publication year - 2017
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-017-16968-0
Subject(s) - zigzag , materials science , laser , slab , electric field , optoelectronics , crystal (programming language) , annealing (glass) , doping , absorption (acoustics) , crystallite , optics , composite material , computer science , structural engineering , metallurgy , engineering , physics , geometry , mathematics , quantum mechanics , programming language
Laser damage of zigzag slab lasers occurs at interface between laser crystal and SiO 2 film. Although an additional HfO 2 layer could be used to manipulate electric-field on the crystal-film interface, their high absorption and polycrystalline structure were unacceptable. SiO 2 was then doped in HfO 2 to suppress its crystallization and to achieve low absorption by annealing. Hf x Si 1−x O 2 nanocomposite layers were then inserted between laser crystal and SiO 2 film to minimize electric-field at crystal-film interface. Laser damage resistance of this new architecture is two times higher than that of traditional zigzag slab lasers.