Open AccessMonolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission
Author(s) -
ChangMo Kang,
Seok-Jίn Kang,
SeungHyun Mun,
Soo-Young Choi,
JungHong Min,
Sang-Hyun Kim,
Jae Hyeok Shim,
Dong-Seon Lee
Publication year - 2017
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-017-11239-4
Subject(s) - light emitting diode , optoelectronics , materials science , subpixel rendering , rgb color model , diode , red color , etching (microfabrication) , optics , pixel , nanotechnology , computer science , layer (electronics) , physics , operating system
In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution. Herein, we introduce adhesive bonding and a chemical wet etching process to monolithically integrate two materials with different bandgap energies for green and red light emission. We successfully transferred AlGaInP-based red LED film onto InGaN-based green LEDs without any cracks or void areas and then separated the green and red subpixel LEDs in a lateral direction; the dual color LEDs integrated by the bonding technique were tunable from the green to red color regions (530–630 nm) as intended. In addition, we studied vertically stacked subpixel LEDs by deeply analyzing their light absorption and the interaction between the top and bottom pixels to achieve ultra-high resolution.