Open AccessAnisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping
Author(s) -
Guijuan Zhao,
Huijie Li,
Lianshan Wang,
Yulin Meng,
Zesheng Ji,
Fangzheng Li,
Hongyuan Wei,
Shuangqiao Yang,
Zhanguo Wang
Publication year - 2017
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-017-04854-8
Subject(s) - strain (injury) , reciprocal lattice , reciprocal , polar , space (punctuation) , x ray , materials science , physics , optics , computer science , biology , diffraction , astronomy , linguistics , philosophy , anatomy , operating system
In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga 1− x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In x Ga 1− x N reciprocal lattice points progressively shifts from a fully compressive strained to a fully relaxed position, then to reversed tensile strained. To fully understand the strain in the ternary alloy layers, it is helpful to grow high-quality device structures using a-plane nitrides. As the layer thickness increases, the strain of In x Ga 1− x N layer releases through surface roughening and the 3D growth-mode.