Open AccessDemonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
Author(s) -
Takafumi Hayashi,
Yuta Kawase,
Noriaki Nagata,
Takashi Senga,
Sho Iwayama,
Motoaki Iwaya,
Tetsuya Takeuchi,
Satoshi Kamiyama,
Isamu Akasaki,
Takahiro Matsumoto
Publication year - 2017
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-017-03151-8
Subject(s) - excitation , materials science , layer (electronics) , optoelectronics , laser , active layer , cathode ray , range (aeronautics) , electron , beam (structure) , wide bandgap semiconductor , laser beams , optics , nanotechnology , physics , composite material , quantum mechanics , thin film transistor
This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approximately 353 nm and a threshold power density of 230 kW/cm 2 . A comparison of optical pumping and electron beam pumping demonstrated that the rate of generation of electron-hole pairs when using electron beam excitation was approximately one quarter that of light excitation.