Open AccessMetallization and Electrical Transport Behaviors of GaSb under High-Pressure
Author(s) -
Guozhao Zhang,
Baojia Wu,
Jia Wang,
Haiwa Zhang,
Hao Liu,
Junkai Zhang,
Cailong Liu,
Guang-Rui Gu,
Lianhua Tian,
Yanzhang Ma,
Gao Chen
Publication year - 2017
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-017-02592-5
Subject(s) - electrical resistivity and conductivity , materials science , transmission electron microscopy , hall effect , condensed matter physics , electrical resistance and conductance , phase (matter) , analytical chemistry (journal) , chemistry , composite material , nanotechnology , electrical engineering , physics , engineering , organic chemistry , chromatography
The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and first-principles calculations. The temperature-dependent resistivity measurements revealed pressure-induced metallization of GaSb at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m to Imma . In addition, the activation energies for the conductivity and Hall effect measurements indicated that GaSb undergoes a carrier-type inversion (p-type to n-type) at approximately 4.5 GPa before metallization. The first-principles calculations also revealed that GaSb undergoes a phase transition from F-43m to Imma at 7.0 GPa and explained the carrier-type inversion at approximately 4.5 GPa. Finally, transmission electron microscopy analysis revealed the effect of the interface on the electrical transport behavior of a small-resistance GaSb sample and explained the discontinuous change of resistivity after metallization. Under high pressure, GaSb undergoes grain refinement, the number of interfaces increases, and carrier transport becomes more difficult, increasing the electrical resistivity.