Open AccessSelf-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
Author(s) -
Chi-Hsin Huang,
TaShun Chou,
Juntong Huang,
Shih-Ming Lin,
YuLun Chueh
Publication year - 2017
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/s41598-017-01354-7
Subject(s) - nanorod , stacking , resistive random access memory , crossbar switch , resistive touchscreen , nonlinear system , materials science , optoelectronics , stack (abstract data type) , computer science , nanotechnology , memristor , scheme (mathematics) , electronic engineering , electrical engineering , physics , telecommunications , voltage , engineering , mathematics , mathematical analysis , nuclear magnetic resonance , quantum mechanics , computer vision , programming language
In this study, the resistive switching scheme using TiO 2 nanorod arrays synthesized by a large-scale and low-cost hydrothermal process was reported. Especially, the nonlinear I–V characteristics of TiO 2 nanorod arrays with a nonlinearity of up to ~10, which suppress the leakage current less than 10 −4 Acm −2 , were demonstrated, exhibiting a self-selecting resistive switching behavior. It provides a simple pathway for integration of RRAM crossbar arrays without additional stacking of active devices. The mechanisms of the nonlinear resistive switching behaviors were discussed in detail. In addition, the maximum array numbers of 79 for self-selecting RRAM cells were estimated. The results demonstrate an opportunity of using the concept of self-selecting resistive switching characteristics in a single material, which offers a new strategy to tackle the sneak path issue of RRAM in the crossbar arrays structure.